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Memory for Plug & Play
DDR/DDR2
(For memory module) SPD Memory
BR34E02FVT-W,BR34E02NUX-W
● Description
BR34E02FVT-W is 256 × 8 bit Electrically Erasable PROM (Based on Serial Presence Detect)
● Features
1) 256 × 8 bit architecture serial EEPROM
2) Wide operating voltage range: 1.7V-3.6V
3) Two-wire serial interface
4) High reliability connection using Au pads and Au wires
5) Self-Timed Erase and Write Cycle
6) Page Write Function (16byte)
7) Write Protect Mode
Settable Reversible Write Protect Function: 00h-7Fh
Write Protect 1 (Onetime Rom) : 00h-7Fh
Write Protect 2 (Hardwire WP PIN) : 00h-FFh
8) Low Power consumption
Write (at 1.7V ) : 0.4mA (typ.)
Read (at 1.7V ) : 0.1mA(typ.)
Standby ( at 1.7V ) : 0.1μA(typ.)
9) DATA security
Write protect feature (WP pin)
Inhibit to WRITE at low V CC
10) Compact package: TSSOP-B8, VSON008X2030
11) High reliability fine pattern CMOS technology
12) Rewriting possible up to 1,000,000 times
13) Data retention: 40 years
14) Noise reduction Filtered inputs in SCL / SDA
15) Initial data FFh at all addresses
● BR34E02-W Series
No.09002EBT03
Capacity
2Kbit
Bit format
256X8
Type
BR34E02-W
Power Source Voltage
1.7V ～ 3.6V
TSSOP-B8
●
VSON008X2030
●
● Absolute Maximum Ratings (Ta=25 ℃ )
Parameter
Supply Voltage
Symbol
V CC
Rating
-0.3 ～ +6.5
Unit
V
Power Dissipation
Storage Temperature
Operating Temperature
Terminal Voltage (A0)
Terminal Voltage (etcetera)
Pd
Tstg
Topr
-
-
330(BR34E02FVT-W)
300(BR34E02NUX-W)
-65 ～ +125
-40 ～ +85
-0.3 ～ 10.0
-0.3 ～ V CC +0.3
*1
*2
mW
℃
℃
V
V
* Reduce by 3.3mW(*1), 3.0 mW(*2)/ ? C over 25 ? C
● Recommended operating conditions
Parameter
Supply Voltage
Input Voltage
www.rohm.com
? 2009 ROHM Co., Ltd. All rights reserved.
Symbol
V CC
Ｖ IN
1/18
Rating
1.7 ～ 3.6
0 ～ V CC
Unit
V
V
2009.09 - Rev.B
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